magnetoresistance anisotropy

magnetoresistance anisotropy
Макаров: анизотропия магнетосопротивления

Универсальный англо-русский словарь. . 2011.

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  • Exchange bias — or exchange anisotropy occurs in bilayers (or multilayers) of magnetic materials where the hard magnetization behavior of an antiferromagnetic thin film causes a shift in the soft magnetization curve of a ferromagnetic film. The exchange bias… …   Wikipedia

  • Nobel Prize winners by name — ▪ Table Nobel Prize winners by name A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   Y   Z A name year category country* achievement literary area Abrikosov, Alexey A. 2003 physics U.S. discoveries… …   Universalium

  • Nobel Prize winners by year — ▪ Table Nobel Prize winners by year 1901–10 1941–50 1981–90 1911–20 1951–60 1991–2000 1921–30 1961–70 2001–08 1931–40 1971–80 1901–10 year category name country* achievement literary area 1901 chemistry Henricus van t (Hoff, Jacobus Henricus van… …   Universalium

  • Nobel Prize winners by category (physics) — ▪ Table TR class= oec even > ss= oec even > Nobel Prize winners by category (physics) year name country* achievement 1901 Röntgen, Wilhelm Conrad Germany discovery of X rays 1902 Lorentz, Hendrik Antoon The Netherlands investigation of the… …   Universalium

  • Nobel Prize winners by year (2001-10) — ▪ Table Nobel Prize winners by year (2001–10) year category name country* achievement literary area 2001 chemistry Knowles, William S. U.S. work on chirally catalyzed hydrogenation reactions chemistry Noyori Ryoji (Noyori Ryōji) Japan work on… …   Universalium

  • Magnetoresistive Random Access Memory — (MRAM) is a non volatile computer memory (NVRAM) technology, which has been under development since the 1990s. Continued increases in density of existing memory technologies ndash; notably Flash RAM and DRAM ndash; kept MRAM in a niche role in… …   Wikipedia

  • Magnetoresistive random access memory — Computer memory types Volatile RAM DRAM (e.g., DDR SDRAM) SRAM In development T RAM Z RAM TTRAM Historical Delay line memory Selectron tube Williams tube Non volatile …   Wikipedia

  • Multiferroics — have been formally defined as materials that exhibit more than one primary ferroic order parameter simultaneously (i.e. in a single phase).[1] The four basic primary ferroic order parameters are ferromagnetism, ferroelectricity, ferroelasticity… …   Wikipedia

  • Рябченко, Сергей Михайлович — Рябченко Сергей Михайлович …   Википедия

  • Planar Hall sensor — The planar Hall sensor [http://www.mic.dtu.dk/upload/institutter/mic/forskning/magnetic systems/reports/phd louiseejsing.pdf] is based on the planar Hall effect of ferromagnetic materials. [http://scitation.aip.org/getpdf/servlet/GetPDFServlet?fil… …   Wikipedia

  • Шехтер, Роберт — Роберт Шехтер (1947, Харьков) советский и шведский физик. Родился на Украине. Окончил Харьковский университет (1965). Специальность «Теоретическая физика, физика твёрдого тела». В 1970 году в Харьковском университете защитил кандидатскую… …   Википедия


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